硅掺杂铝镓氮薄膜场发射性能研究  

Field emission properties of silicon doped AlGaN thin film

作　　者：王京[1] 王如志[1] 赵维[1] 陈建[2] 王波[1] 严辉[1] 

机构地区：[1]北京工业大学材料科学与工程学院薄膜实验室,北京100124 [2]中山大学测试中心,广州510275

出　　处：《物理学报》2013年第1期429-434,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11074017;51072236);北京市属市管高等学校人才强教计划(批准号:PHR201007101);北京市科技新星计划(批准号:2008B10);北京市自然科学基金(批准号:1102006);北京工业大学基础研究基金资助的课题~~

摘　　要：利用脉冲激光沉积,分别制备了一系列不同Si掺杂浓度的铝镓氮(AlGaN)薄膜.对此薄膜进行场致电子发射测试表明,Si掺杂浓度为1%的AlGaN薄膜具有最好的场发射特性.相对于非掺杂样品,其场发射电流明显增加,场发射开启电场显著降低.掺杂带来载流子浓度的提升,为场发射提供足够的电子源,使样品的场发射性能提升.但掺杂浓度的进一步提高,薄膜缺陷增加,电子迁移率降低,其薄膜内部电子输运能力降低大于电子浓度的增加对场电子发射的贡献,导致场发射性能开始变差.Aluminum gallium nitride （A1GaN） thin films are prepared by pulsed laser deposition with different silicon doping concentrations from 0.5% to 2%. The field emission measurement shows that the 1% Si-doped A1GaN film has the best field emission property. Compared with undoped film, the Si-doped film has a large emission current density and a low threshold field. The increase of doping concentration can increase the carrier concentration, which will add a number of supply electrons, thereby improving greatly the FE property of A1GaN film. With the doping concentration further increasing, the defect of film increases and the electron mobility reduces. The reduction of the internal supply electron is greater than the contribution of the increase of electrons concentration, which induces the field emission performance to deteriorate. This study will provide a reliable basis for.designing high-performance fieldemission devices.

关 键 词：铝镓氮 场发射 Si掺杂 

分 类 号：O484.1[理学—固体物理]