(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)P材料的MOCVD生长温度窗口研究  

Temperature window of the (Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)P growth by MOCVD

作　　者：孙沛[1] 李建军[1] 邓军[1] 韩军[1] 马凌云[1] 刘涛[1] 

机构地区：[1]北京工业大学电子信息与控制工程控学院,光电子技术省部共建教育部重点实验室,北京100124

出　　处：《物理学报》2013年第2期502-506,共5页Acta Physica Sinica

基　　金：北京市教委项目(批准号:PXM201101420409000065)资助的课题~~

摘　　要：用来制作光电子器件的(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)为直接带隙的四元合金材料,对应的发光波长为630nm,在其LP-MOCVD(low press-metalorganic chemical vapor deposition)外延生长过程中温度的高低成为影响其质量的关键,找到合适的生长温度窗口很有必要.实验中分别在700C,680C,670C和660C的条件下生长出作为发光二极管有源区的(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)多量子阱结构,通过PL谱的测试对比分析,找出最佳生长温度在670C附近.之后对比各外延片的PL谱、表面形貌,并对反应室的气流场进行了模拟,对各温度下生长状况的原因作出了深入分析.分析得到,高温下In组分的再蒸发会引起晶格失配并导致位错;低温下O杂质的并入会形成大量非辐射复合中心影响晶体质量,因此导致了(Al_(0.1)Ga_(0.9))_(0.5)In_(0.5)生长温度窗口较窄,文章最后提出In源有效浓度的提高是解决高温生长的一条有效途径.The （Al0.1Ga0.9）0.5In0.5P, four-element alloy, whose band is direct, is used to make optoelectronic devices. The wavelength of the material is about 630nm. When it is epitaxially grown by low press-metalorganic chemical vapor deposition（LP-MOCVD）, its quality will depend on temperature, one of the most important conditions. So it is essential to find out the best temperature of growth. The quantum wells of the （Al0.1Ga0.9）0.5In0.5P are grown at 700 ℃, 680 ℃, 670 ℃ and 660 ℃ respectively. The best temperature, which is found out by the results of photoluminescence PL, is about 670 ℃. The reasons are given by the results of PL, surfaces of wafers and the flow field simulation of MOCVD. The revaporization of In at high temperature and the incorporation of O at low temperature can lead to bad quality. An available path to solve growth at high temperature is to increase the effective density of In. Keywords： AlGaInP temperature MOCVD

关 键 词：A1GaInR温度 MOCVD 

分 类 号：TN304.055[电子电信—物理电子学]