InGaN多量子阱面发射微盘激光器的理论研究  

Theoretical Model for Surface-emitting Microdisk of InGaN MQW

作　　者：谢成城[1] 王舒民[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《半导体光电》2000年第3期188-192,共5页Semiconductor Optoelectronics

摘　　要：为了实现半导体微盘激光器的单模面发射 ,设计了一种以InGaN多量子阱为有源层 ,GaN外延层为覆盖层的半导体微盘激光器。通过对GaN覆盖层进行图形刻蚀 ,可以对不同的角模式进行有选择的增益 ,由此实现选模。用有效增益因子加电介质盘的模型对实际微盘结构进行简化 ,并根据此模型计算微盘内的场分布和盘外的远场分布 ,并进一步计算有效增益因子。分析表明 ,这种结构能够实现m =1角模式的面发射。For the purpose of achieving single mode surface-emission of semiconductor microdisk,a kind of model using InGaN MQW as an active layer and GaN epitaxial layer as the clad layer is designed.To pick out the surface-emitting mode,a surface pattern for the microdisk is realized by etching the GaN clad.In optical mode calculation,the real structure of a microdisk is usually simplified to a dielectric disk with optical gain.So we can calculate not only the TE distribution inside the microdisk and the far field distribution outside the microdisk,but also the efficient gain coefficient of the microdisk.It is shown that the microdisk structure can realize the surface emission with angular mode of m=1.

关 键 词：微盘激光器 面发射 多量子阱 INGAN 

分 类 号：TN248.4[电子电信—物理电子学]