一个基于BSIM3的LDMOS大信号模型  

A Large Signal Model of LDMOS Based on BSIM3

作　　者：龚鸿雁[1] 卜建辉[1] 姜一波[1] 王帅[1] 杜寰[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2013年第1期130-133,共4页Microelectronics

摘　　要：提出了一个基于BSIM3的LDMOS大信号模型。LDMOS晶体管分为本征MOS晶体管和漂移区电阻两部分,本征MOS晶体管采用BSIM3模型,漂移区电阻采用一个随栅漏电压变化的电阻模型。根据ISE仿真结果,可以得到漂移区电阻模型。模型考虑自加热效应后,经过参数提取,模拟数据可以很好地与实际器件的测试数据相吻合,说明模型可用于LDMOS功率器件的电路仿真。A large signal model of LDMOS based on BSIM3 was presented.The LDMOS transistor was divided into two parts： intrinsic MOS transistor and drift region resistance.For intrinsic MOS transistor,BSIM3 model was used,and for drift region resistance,a bias-dependent resistance model was adopted.And a drift region resistance model was extracted from ISE simulation results.With self-heating effect taken into consideration,and after parameter extraction,the simulated I-V characteristics of the LDMOS model were in good agreement with measured data of the actual device,which demonstrated suitability of the model for simulation of circuits incorporating power LDMOS devices.

关 键 词：LDMOS 漂移区电阻 大信号模型 自加热效应 

分 类 号：TP386.1[自动化与计算机技术—计算机系统结构]