Si衬底上低真空热处理制备单一相Mg_2Si半导体薄膜  

Preparation of single phase semiconducting Mg_2Si film on Si substrate by low vacuum heat treatment

作　　者：肖清泉[1] 谢泉[1] 沈向前[1] 张晋敏[1] 陈茜[1] 

机构地区：[1]贵州大学理学院新型光电子材料与技术研究所,贵州贵阳550025

出　　处：《功能材料》2013年第4期585-589,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61264004);贵州省科技攻关资助项目(黔科合GY字[2011]3015);贵州省科技创新人才团队建设专项资金资助项目(黔科合人才团队[2011]4002);贵州省国际科技合作资助项目(黔科合外G字[2012]7004);贵阳市科技计划资助项目(筑科合同[2012101]2-16);贵州大学引进人才科研资助项目(贵大人基合字[2010]032);贵州大学引进人才科研资助项目(单一相Mg2Si半导体薄膜的制备技术及其光学;电学性质研究[2012]);贵州省自然科学基金资助项目(黔科合J字[2011]2323);贵州省青年英才培养工程资助项目(黔省专合字[2012]152)

摘　　要：采用磁控溅射沉积方法制备Mg2Si半导体薄膜。首先在Si衬底上沉积Mg膜,随后低真空热处理。采用X射线衍射、扫描电镜、拉曼光谱对Mg2Si薄膜的结构进行表征。研究了在低真空(10-1～10-2Pa)条件下热处理温度(350～550℃)和热处理时间(3～7h)对Mg2Si薄膜形成的影响。结果表明,低真空热处理条件下制备了单一相Mg2Si半导体薄膜,400～550℃热处理4～5h是最佳的热处理条件。在拉曼谱中256和690cm-1处观察到两个散射峰,这与Mg2Si的拉曼特征峰峰位一致。Semiconducting Mg2Si films were prepared by magnetron sputtering,Mg film was deposited onto Si substrate and subsequent low vacuum heat treatment was carried out.X-ray diffraction,scanning electron microscopy and Raman spectra were performed to characterize and analyze the structure of films.Effects of heat treatment temperatures（350-550℃） and heat treatment time（3-7 h） on the formation of Mg2Si films were investigated under low vacuum（10-1-10-2Pa）.The results show that the optimal heat treatment conditions for preparing single phase Mg2Si film are 400-550℃ and 4-5h in low vacuum.Two distinguished peaks at 256 and 690cm-1 are observed in Raman scattering spectra,which are characteristic peak position of Mg2Si.

关 键 词：半导体薄膜 MG2SI 磁控溅射 热处理 表征 

分 类 号：O484.1[理学—固体物理]