N_2分压对ZrGeN阻挡层微结构及性能影响  

Influence of N_2 content on the microstructure and properties of Zr-Ge-N diffusion barriers

作　　者：张彦坡[1] 刘波[1] 任丁[1] 林黎蔚[1] 杨斌[1] 徐可为[2] 

机构地区：[1]四川大学原子核科学技术研究所,辐射物理与技术教育部重点实验室,成都610064 [2]西安交通大学材料科学与工程学院,金属材料强度国家重点实验室,西安710049

出　　处：《中国科技论文》2013年第2期132-135,共4页China Sciencepaper

基　　金：国家自然科学基金资助项目(11075112);高等学校博士学科点专项科研基金资助项目(20100181120112)

摘　　要：采用射频磁控溅射技术在Si(111)基体和Cu之间沉积ZrGeN阻挡层,重点研究了Cu/ZrGeN/Si多层膜系中N_2分压对ZrGeN微结构及阻挡层性能的影响。采用四探针电阻仪、X射线光电子能谱、X射线衍射仪、俄歇电子能谱表征ZrGeN薄膜和Cu/ZrGeN/Si多层膜体系的电阻率、成分、微结构和热稳定性能。ZrGeN薄膜结构在沉积过程中对N_2与Ar气体流量比非常敏感,随N_2/(Ar+N_2)流量比的增加,依次形成多晶、类非晶ZrGeN膜层;较高N_2含量的ZrGeN系统在800℃退火后仍能保持其非晶结构,Cu在其中的扩散速度慢,可以作为扩散阻挡层使用。We investigated the influence of N2 content on the microstructure and thermal stability of Zr-Ge-N diffusion barriers, which were sputtered by radio frequency reactive magnetron sputter-deposition technique using N2 and Ar mixed gas. Samples of Cu/Zr-Ge-N/Si were subsequently annealed at 800 ℃ in vacuum, and characterized by four-point probe technique （FPPT）, X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD） and Auger electron spectroscopy （AES）, respectively. Results indi- cated that the film structure was sensitive to the gas flow ratio of Nz to Ar during sputtering. With the increase of N2/（Ar＋N2 ） ratio, polycrystalline and amorphous-like Zr-Ge-N films were obtained successively. The Zr-Ge-N films kept their amorphous phase as the N content increased, and had the ability to prevent Cu atom diffusion into Si substrate effectively.

关 键 词：薄膜 扩散阻挡层 微结构 热稳定性 非晶态 

分 类 号：O484.43[理学—固体物理]