垒层p型掺杂量的分布对InGaN基发光二极管性能的影响  

Influence of p-doping Distribution in Barriers on the Performance of InGaN Based Light-Emitting Diodes

作　　者：刘超[1] 李述体[1] 仵乐娟 王海龙[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《华南师范大学学报（自然科学版）》2013年第2期60-63,共4页Journal of South China Normal University(Natural Science Edition)

基　　金：国家自然科学基金项目(51172079);广州市科技攻关项目(11A52091257)

摘　　要：采用APSYS软件分析了InGaN基发光二极管的垒层中p型掺杂量的分布及其作用.结果表明,当所有的p型掺杂量集中于最后一个垒层时,发光二极管的发光强度最大,大注入电流下的效率衰减量最小.其主要原因是优化了垒层中p型掺杂量的分布有利于电子限制和空穴注入.The blue InGaN based light -emitting diodes （LEDs） with constant total p -doping amount in barriers but different doping distribution have been numerically studied by the APSYS simulation software in this paper. The simulation results demonstrated that with more p - doping amount centralized in the last barrier, higher output power was illustrated. In the meanwhile, the efficiency droop was markedly improved at injection current of 200 mA. It is mainly attributed to more efficient electron blocking and hole injection as well as lower electron leakage current.

关 键 词：发光二极管 GAN INGAN 多量子阱 

分 类 号：O482.7[理学—固体物理]