Al-Sn共掺杂ZnO薄膜的结构与光电性能研究  

Microstructures and Electro-Optical Properties of ZnO Films Doped with Al and Sn

作　　者：刘斌[1] 沈鸿烈[1] 冯晓梅[1] 王威[1] 岳之浩[1] 吴天如[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《真空科学与技术学报》2013年第2期115-119,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家863计划项目(2006AA03Z219);江苏高校优势学科建设工程资助项目

摘　　要：采用射频磁控共溅射法在玻璃衬底上制备出了Al与Sn共掺杂的ZnO(ATZO)薄膜。在固定ZnO∶Al(AZO)靶溅射功率不变的条件下,研究了Sn靶溅射功率对ATZO薄膜的结晶质量、表面形貌、电学和光学性能的影响。结果表明,制备的ATZO薄膜是六角纤锌矿结构的多晶薄膜,具有c轴择优取向,而且表面致密均匀。当Sn溅射功率为5W时,330 nm厚度的ATZO薄膜的电阻率最小为1.49×10-3Ω.cm,比AZO薄膜下降了22%。ATZO薄膜在400～900 nm波段的平均透过率为88.92%,禁带宽度约为3.62 eV。The ZnO films doped with A1 and Sn （ATZO） were deposited by RF magnetmn sputtering on glass sub- strates. The impacts of the growth conditions, including the sputtering power in Sn-doping, contents of AI and Sn, and film thickness, on the microstructures and electro-optical properties were evaluated. The ATZO films were characterized with X- ray diffraction and scanning electron microscopy. The results show that the wurtzite-phased, smooth and compact ATZO film is polycrystalline,with c-axis as the preferential growth orientation of the ZnO grains. The lowest resistivity of the films doped with Sn at a sputtering power of 5 W in the ZnO films pre-doped with Al,was found to be 1.49× 10^-3Ω·cm,22% lower than that of the Al-doped ZnO film. The average transmittance in the range of 400 - 900 nm, and the and-gap of the ATZO films were estimated to be 88.92% and 3.62 eV,respectively.

关 键 词：ZNO薄膜 磁控溅射 Al-Sn共掺杂 光电特性 

分 类 号：O484[理学—固体物理] TN304.2[理学—物理]