CMOS反相器内部瞬态闩锁效应的脉冲宽度效应理论模型  

Theoretical modeling of effect of pulse width on microwave pulse triggered internal transient latch-up in CMOS inverters

作　　者：陈杰[1] 杜正伟[1] 

机构地区：[1]清华大学电子工程系,微波与数字通信技术国家重点实验室,北京100084

出　　处：《强激光与粒子束》2013年第5期1200-1204,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目

摘　　要：从基本半导体物理出发,通过求解载流子连续性方程,建立了能够定量描述引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值与脉冲宽度关系的解析理论模型。通过与仿真结果以及文献中实验数据的对比,验证了该理论模型的正确性。该理论模型表明,引起CMOS反相器内部瞬态闩锁效应的微波脉冲功率阈值首先随着脉冲宽度增加逐渐降低,但是存在一个明显拐点区域,当脉冲宽度超过该区域之后,引起闩锁效应的功率阈值变化不甚明显。Based on the basic principle of semiconductor physics, an analytical theoretical model was proposed to show the relationship between the microwave pulse power threshold triggering the internal transient latch-up in the CMOS inverter and pulse width quantitatively by solving the continuity equations for minority carriers. By comparing the proposed theoretical model with simulated results and experimental data reported in literatures, the correctness of the theoretical model was verified. Furthermore, the model suggests that the power threshold triggering the internal transient latch-up in the CMOS inverter is a decreasing function of pulse width as the pulse width is short. However, there is an inIlexion range and the power threshold varies little when the pulse width exceeds the inflexion range.

关 键 词：微波脉冲 CMOS反相器 闩锁效应 脉冲宽度 

分 类 号：TN386.1[电子电信—物理电子学]