Co掺杂ZnO基稀磁半导体材料磁性研究进展  

Recent progress in developing magnetic properties of Co-doped ZnO diluted magnetic semiconductors

作　　者：李彤[1] 介琼[1] 张宇[1] 王雅欣[1] 倪晓昌[1] 

机构地区：[1]天津职业技术师范大学电子工程学院,天津300222

出　　处：《天津职业技术师范大学学报》2013年第1期13-16,共4页Journal of Tianjin University of Technology and Education

基　　金：天津市教委科研基金项目(20120710)

摘　　要：ZnO基稀磁半导体是目前研究的热门课题,其中关于Co掺杂ZnO的磁性研究有很多报道。本文对不同方法及条件制备的Co掺杂ZnO基稀磁半导体的磁性和相应机理进行了归纳总结,分析发现铁磁性可能源于载流子调制、晶格中的氧空位、杂质相、交换作用等。ZnO-based diluted magnetic semiconductors （DMSs）have become a focus problem. Recently, there have been many reports about the magnetism of Co doped Zn0. In this paper, the magnetic properties and possible mechanism of Co-doped ZnO-based DMSs prepared by different methods and conditions are summarized and reviewed. It is found that ferromagnetism may be due to its carrier modification, oxygen vacancy, impurity phase, exchanger interaction and etc.

关 键 词：稀磁半导体 ZNO CO 磁性机理 

分 类 号：O472.5[理学—半导体物理] TN304[理学—物理]