单材料双功函数栅MOSFET的电容模型  

Capacitance Model of Single Material Double Workfunction Gate MOSFET

作　　者：张伟[1] 徐太龙[1] 周茂秀[1] 赵强[1] 代月花[1] 

机构地区：[1]安徽大学电子信息工程学院,合肥230601

出　　处：《半导体技术》2013年第4期268-272,共5页Semiconductor Technology

基　　金：国家自然科学基金项目(61006064);安徽省高校优秀青年基金项目(2012SQRL013ZD);安徽大学青年研究基金项目(KJQN1011)

摘　　要：基于表面势理论和电荷平衡方程,建立了一种单材料双功函数栅(single materialdouble workfunction gate,SMDWG)MOSFET的电容模型,分别给出了SMDWG MOSFET的栅-源和栅-漏电容的解析表达式,物理概念清晰,且参数可调。通过与MEDICI模拟结果比较和分析,进一步验证了该物理模型的正确性和可行性。然后,基于上述模型设计了SMDWG MOSFET的电容等效电路,发现在考虑总电容的时候,只需要考虑其中的一个分电容,有效简化了对该器件的计算和分析,对器件的设计和应用具有一定的参考意义。Based on surface potential theory and charge balance equation, a capacitance model of single material double workfunction gate （SMDWG） MOSFET was built. The model provided analytical expressions of gate-source and gate-drain capacitances of SMDWG MOSFET respectively with clear physical concept and adjustable parameters. The correctness and feasibility of the physical model were further verified by comparing with the simulation results by MEDICI. Then the capacitance equivalent circuit of the SMDWG MOSFET was designed based on the above model. It is found that only one sub- capacitance needs to be considered when the total capacitance is considered, which simplifies the calculation and analysis of the device effectively. And it has certain reference value for the design and application of the device.

关 键 词：单材料双功函数栅 MOSFET 电容 表面势 等效电路 

分 类 号：TN386[电子电信—物理电子学]