国产MO源的GaAs、GaAlAs的MOCVD生长  

MOCVD Growth of GaAs、GaAlAs Films by Mo Materials Made in China

作　　者：张千勇[1] 史全林[1] 王喜祥 徐莉[1] 

机构地区：[1]长春光学精密机械学院近代光学研究所

出　　处：《长春光学精密机械学院学报》1991年第2期19-20,共2页Journal of Changchun Institute of Optics and Fine Mechanics

摘　　要：本文报导了采用国产MOCVD装置和MO源材料生长GaAs、GaALAs多层结构的实验情况,探索MOCVD装置和MO源材料全部国产化的途径,初步获得比较满意的结果,为器件的研究奠定初步基础。This paper reported exerimental growing instance about poly—layers instuction of GaAlAs, GaAlAs imployed MOCVD eguipment and MO materils made in China. The way that all of MOCVD eguipment and MO materials is made by China is explored. The fundamentals for research of devices is established.

关 键 词：MOCVD 外延生长 掺杂 半导体薄膜 

分 类 号：TN304.054[电子电信—物理电子学]