SiC(0001)面和(000-1)面CMP抛光对比研究  

Comparative Chemical Mechanical Polishing Studies of SiC(0001)and SiC(000-1)Surface

作　　者：潘章杰[1] 冯玢[1] 王磊[1] 郝建民[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300222

出　　处：《电子工业专用设备》2013年第4期19-23,共5页Equipment for Electronic Products Manufacturing

摘　　要：研究了SiC衬底(0001)面和(000-1)面不同的CMP抛光特性。分别采用pH值为10.38和1.11的改性硅溶胶抛光液对SiC衬底的(0001)Si面和(000-1)C面进行对比抛光实验。使用精密天平测量晶片抛光前后的质量,计算出CMP抛光工艺的材料去除速率。并使用强光灯、微分干涉显微镜和原子力显微镜检测晶片表面质量。发现采用酸性抛光液和碱性抛光液进行抛光,均有VC>VSi;而对于(0001)Si面,有VSi酸>VSi碱;对于(000-1)C面,有VC酸>VC碱。该结论对于探索最佳碳化硅的CMP抛光工艺具有较高价值。Different characteristics of Chemical Mechanical Polishing between SiC （0001）and SiC （000-1）surface were investigated. Modified colloidal silica with pH value of 10.38 and 1.11 were applied on SiC （0001） and SiC （000-1） surface respectively. High precise scale was used to measure the mass before and after the CMP processing, and then the material remove rate was calculated by the losing mass. Focusing light, Differential Interference Microscope （DIM） and Atomic Force Microscope （AFM） were used to access the quality of the surface. It was found that Vc〉Vsi in the experiment of using acid and alkaline colloidal silica; Vsi 酸 〉Vsi 碱 for （0001）Si face; Vc 酸 〉Vc 碱 for （000-1） C face. It was considered that the conclusion was valuable to find the optimal CMP processing of silicon carbide.

关 键 词：碳化硅 (0001)Si面 (000 1)C面 化学机械抛光(CMP) 材料去除速率 粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]