金属基Pt/ITO薄膜热电偶的制备  

Fabrication of Pt/ITO Thin-Film Thermocouple on Metal Substrates

作　　者：赵文雅[1] 蒋洪川[1] 陈寅之[1] 张万里[1] 刘兴钊[1] 彭少龙[1] 唐磊[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国燃气涡轮研究院测控室,四川江油621703

出　　处：《测控技术》2013年第4期23-25,共3页Measurement & Control Technology

基　　金：国防预研基金资助项目(51312050405)

摘　　要：采用多层膜结构制备了金属基Pt/ITO薄膜热电偶,薄膜热电偶由Ni基合金基片、NiCrAlY过渡层、热生长Al_2O_3层、Al_2O_3绝缘层、Pt/ITO功能层和Al_2O_3保护层构成。静态标定结果表明:样品的平均塞贝克系数为107.45μV/℃。测试温度可达到1000℃。时效处理可以有效提高薄膜热电偶的输出热电势。The Pt/ITO thin-film thermocouples with multilayer structure are fabricated on metal substrates.The thin-film thermocouple is composed of Ni-base alloy substrate,NiCrAlY buffer layer,thermal growth Al_2O_3 layer, Al_2O_3 insulating layer,Pt/ITO function layer and Al_2O_3 protective layer.The results of the static calibration of the sample show that the average Seebeck coefficient is about 107.45μV /℃.The test temperature can be up to 1000℃.The thermoelectric power of the sample can be effectively improved by aging treatment.

关 键 词：PT ITO薄膜热电偶 静态标定 热电势 塞贝克系数 

分 类 号：TP212.9[自动化与计算机技术—检测技术与自动化装置]