金属有机化学气相沉积法生长条件对AlN薄膜面内晶粒尺寸的影响  

Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition

作　　者：吴亮亮[1] 赵德刚[1] 李亮[1] 乐伶聪[1] 陈平[1] 刘宗顺[1] 江德生[1] 

机构地区：[1]中国科学院半导体研究所,集成光电子学国家重点实验室,北京100083

出　　处：《物理学报》2013年第8期386-390,共5页Acta Physica Sinica

基　　金：国家杰出青年科学基金(批准号:60925017);国家自然科学基金(批准号:10990100;60836003;60976045;61176126);清华信息科学与技术国家实验室(筹)学科交叉基金资助的课题~~

摘　　要：研究了金属有机化学气相沉积设备生长条件对AlN薄膜质量的影响.应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响.实验结果表明,随着氮化时间减小,缓冲层生长时间增加,载气流量减少,AlN薄膜的侧向生长和岛的合并能力增强,面内晶粒尺寸增大,从而晶体质量也变好.In this paper, we investigate the effect of growth conditions on the quality of AIN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AIN buffer layer and the flow rate of carrier gas, on the lateral grain size of A1N film. It is found that the redution of nitridation time, the increase of growth time of AIN buffer layer, and the reduction of the flow rate of carder gas can enhance the lateral growth of AIN film and coalescence of islands and increase the lateral grain size of A1N film. So the quality of AIN film is improved.

关 键 词：ALN Williamson-Hall 面内晶粒尺寸 

分 类 号：O484.1[理学—固体物理]