以氮化铝陶瓷为基板的倒装式封装工艺研究  

Study of the Process of the Flip Chip Package Based on Aluminum Nitride Substrate

作　　者：胡向洋[1] 汪荣昌[1] 顾志光[1] 戎瑞芬[1] 邵丙铣[1] 宗祥福[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《半导体技术》2000年第5期29-32,共4页Semiconductor Technology

基　　金：国家自然科学基金!69836030

摘　　要：详细比较了氮化铝的各种金属化工艺。分别研究化学镀镍与激光诱导淀积实现金属化的方法。测量表明，两种方法制备的金属层与氮化铝的粘附力均大于10MPa。同时对这两钟方法的特点与适用范围进行概述。Various methods to metallize aluminum nitride substrate are discussed. Electroless plating method and laser induced deposition method are respectively studied. The results of adhesion strength of the metal film made by the two methods are excellent The advantages and the application range of the two methods are also summarized.

关 键 词：氮化铝 倒装式封装 陶瓷 基板 

分 类 号：TN305.94[电子电信—物理电子学]