Au/Ti/p型金刚石膜欧姆接触特性研究  

Characteristics of Au/Ti/p-diamond Ohmic Contact

作　　者：王印月[1] 甄聪棉[1] 刘雪芹[1] 闫志军 龚恒翔[1] 杨映虎[1] 何山虎[1] 

机构地区：[1]兰州大学物理系,甘肃兰州730000

出　　处：《半导体光电》2000年第5期328-331,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目

摘　　要：在重掺杂硼金刚石膜上溅射沉积了Ti/Au接触 ,用CTLM测量了样品退火前后的I-V特性 ,并对大电流情况进行了讨论。就测试温度和光照强度对接触特性的影响进行了分析。定性给出了该接触的能带模型。样品接触电阻率 ρc 最低值达 1.2 3 6× 10 - 6 Ω·cm2 。I-V measurement of Ti/Au contact prepared by sputtering Ti/Au on hea vily boron-doped p-diamond is performed before and after annealing,followed by d iscussion on I-V characteristics in relatively strong current cases. The eff ects of the operating temperature and li ght intensity on the contact characteristics are investigated. The band model is given qualitatively. The smallest ρ c value of these Au/Ti/p-diamond sam ples is as low as 1.236×10 -6 Ω·cm2.

关 键 词：欧姆接触 金刚石薄膜 接触电阻率 溅射沉积 

分 类 号：TN304.18[电子电信—物理电子学]