基于InP衬底的晶格失配In_(0.68)Ga_(0.32)As的MOCVD生长及其特性研究  

Characterization of the lattice mismatched In_(0.68) Ga_(0.32) As Material Grown on InP substrate by MOCVD

作　　者：朱亚旗[1,2] 陈治明[1] 陆书龙[2] 季莲[2] 赵勇明[2] 谭明[1,2] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710054 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件重点实验室,江苏苏州215125

出　　处：《红外与毫米波学报》2013年第2期118-121,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61176128);苏州市工业支撑计划(Y1SAQ31001)~~

摘　　要：采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32As晶格匹配的InAsxP1-x'虚拟'衬底,通过对缓冲层厚度的优化,使应力能够在'虚拟'衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68Ga0.32As外延层的晶体质量.The lattice mismatched In0.68 Ga0.32 As materials were grown on InP substrate by MOCVD technology. In- ASxPt^x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and strain offset buffer structure , In this way, we got a strain relaxed InAsxP1-x＂ virtual＂ substrate, which is lattice matched to I%.68 Gao.32 As . With an optimized thickness of the buffer layer,the strain was completely relaxed in the ＂virtual＂ substrate. The analysis of AFM, HRXRD , TEM and photoluminescence （PL） indicated that this method can effectively improve the quality of the In0.68Ga0.32As material.

关 键 词：IN0 68Ga0 32As 应力释放 InAsxP1-x 

分 类 号：G316[文化科学]