由pnp双极型晶体管和PMOS构成的CMOS负阻单元  

The CMOS NDR Element Formed by pnp Bipolar Junction Transistor and PMOS

作　　者：陈乃金[1] 郭维廉[2] 陈燕[2] 王伟[3] 张世林[2] 毛陆虹[2] 

机构地区：[1]安徽工程大学计算机与信息学院,安徽芜湖241000 [2]天津大学电子信息工程学院,天津300072 [3]中国科学院,半导体研究所,北京100083

出　　处：《固体电子学研究与进展》2013年第2期158-161,198,共5页Research & Progress of SSE

基　　金：国家重点基础研究发展计划资助项目(2002CB11905);安徽省高等学校省级自然科学资金资助项目(KJ2007B247;KJ2012B010);芜湖市科技计划自然科学资金资助项目(芜科计字[2012]94号)

摘　　要：使用pnp双极型晶体管和pMOS,按照正反馈产生负阻I-V特性的原理,采用CMOS工艺,设计研制成功CMOS负阻单元,并对它进行了实际的测试与验证,效果良好,而且可以用它作为基础性器件,构成与CMOS工艺相兼容的负阻型逻辑电路,比常规CMOS电路节省大量器件。By adopting according to the operating principle of generation on NDR in I-V char- acteristic by positive feedback, a CMOS NDR element formed by pnp bipolar junction transistor and pMOS has been designed and fabricated by CMOS technology in this paper. This element has also been tested and verified, resulting in good performance. By using these CMOS NDR ele- ments as the foundation devices, the NDR logic circuits compatible with CMOS technology can be formed. Compared with conventional CMOS circuits, a lot of devices can be saved.

关 键 词：负阻单元 互补型金属氧化物半导体 逻辑电路 双极晶体管 金属氧化物半导体场效应晶体管 

分 类 号：TN322.8[电子电信—物理电子学] TN386.5