CMOS器件的x光总剂量效应  

X-Ray Total Dose Effect for CMOS Devices

作　　者：姚育娟[1] 龚建成[1] 何宝平[1] 彭宏论[1] 杨海帆[1] 周辉[1] 张正选[1] 郭红霞[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《半导体情报》2000年第5期58-61,共4页Semiconductor Information

摘　　要：主要介绍了塑料封装和柯伐盖封装的 CMOS器件 ,在不同情况的 x射线辐照下 ,其辐照敏感参数阈值电压随总剂量的变化关系。将 x射线辐照的结果与 60 Co辐照的结果比较得出 ,x射线辐照对器件损伤严重。同时 ,探讨了柯伐盖封装器件的剂量增强效应。The irradiation sensitive parameter threshold voltage of CMOS devices are evaluated as a function of irradiation dose of several energy x rays.Kovar lidded parts and plastics lidded parts were chosen to be tested.It was concluded that the damages of x ray were serious by comparing the response of devices irradiated with 60 Co γ ray and x ray .Furthermore,the effects of absorbed dose enhancement for Kovar lidded parts were discussed.

关 键 词：X射线 总剂量 CMOS器件 塑料封装 

分 类 号：TN386.1[电子电信—物理电子学]