用于KrF准分子激光光刻的衰减相移掩模  

The Attenuated Phase-Shifting Mask for KrF Excimer Laser Photolithography

作　　者：孙方[1] 侯德胜[1] 冯伯儒[1] 张锦[1] 

机构地区：[1]中国科学院光电技术研究所微细加工光学技术国家重点实验室,四川成都610209

出　　处：《光电工程》2000年第5期27-30,共4页Opto-Electronic Engineering

基　　金：中国科学院重点项目!(AK970 4);中国科学院光电技术研究所微细加工光学技术国家重点实验室基金资助项目!(KF S990 2 )

摘　　要：讨论了相移掩模提高光刻分辨力的基本原理 ,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法 ,利用自行设计、建立的 Kr F准分子激光投影光刻实验曝光系统进行了实验研究 ,给出了实验结果 ,并与传统光刻方法作了比较。The basic principle for improving photolithography resolution of phase-shifting mask is discussed and a new method for manufacturing attenuated phase-shifting mask with photoresist shifter is proposed.Experimental research in carried out by means of projection photolithography experimental system with KrF excimer laser designed and built by ourselves.The experimental results are given and a comparison with the traditional photolithography methods is carried out.

关 键 词：准分子光刻 相移掩模 图形分辨力 激光光刻 

分 类 号：TN305.7[电子电信—物理电子学]