砷化镓微波单片集成电路(MMIC)技术进展  

Development of GaAs MMIC technology

作　　者：陈效建[1] 毛昆纯[1] 林金庭[1] 杨乃彬[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《功能材料与器件学报》2000年第3期129-136,共8页Journal of Functional Materials and Devices

摘　　要：着重讨论南京电子器件研究所（NEDI）在GaAsMMIC研制方面的近期进展。在详细介绍MMIC有源器件（MESFET，PHEMT及HBT）的CAD模型建立技术及MMICCAD设计优化技术的基础上，以NEDI近年开发的各种MMIC为实例，包括发射、接收与控制三类电路，给出有关的实验结果。此外，简要介绍了NEDI在移动通信手机用MMIC技术开发方面的前期结果。The recent achievements on GaAs MMIC technology at Nanjing Electronic Devices Institute (NEDI) were reviewed in this paper. Based on our practice, devices (MESFET, PHEMT and HBT) modeling technique and MMIC CAD technique were discussed in detail. Relying open MMIC process developing (ion－ implanted MESFET, PHEMT and HBT, by using 3inch GaAs wafers)at NEDI, various device models including that for small signal, large signal and switching application were developed. The models have been used successfully for the development of various MMICs for power, receiving and control circuit use in the last years. Some developed MMIC results including the MMICs for handset use were summarized as the samples in the paper.

关 键 词：砷化镓 微波单片集成电路 CAD模型 设计优化 

分 类 号：TN454[电子电信—微电子学与固体电子学]