LP-MOCVD生长大功率InGaAsP/GaAs量子阱激光器  

High power InGaAsP/GaAs SCH SQW lasers grown by LP－ MOCVD

作　　者：李忠辉[1] 张宝顺 杨进华 张兴德 王向武[2] 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室,长春130022 [2]信息产业部电子第五十五所新材料中心,南京210016

出　　处：《功能材料与器件学报》2000年第3期232-235,共4页Journal of Functional Materials and Devices

摘　　要：设计并利用LP－MOCVD生长了InGaAsP/GaAs分别限制单量子阱结构，采用无铝的InGaP做光学包层。腔面未镀膜情况下，测试10支条宽100μm，腔长1mm的激光器样品，连续输出功率超过1W，阈值电流密度为330～490A/cm2，外微分量子效率为55％～78％，中心发射波长为(808±3)nm。InGaAsP/GaAs SCH SQW lasers have been prepared by LP－ MOCVD .The dependence of threshold current density (Jth) on cavity length (L) was explained by threshold current condition and gain characteristics. The samples have output power of 1 to 2W, threshold current density (Jth) of 330 to 450A/cm2 and external differential efficiency (η d) 55％ to 78％ , lasing wavelength λ =808± 3nm, which are in good agreement with the designed requirement.

关 键 词：LP-MOCVD INGAASP/GAAS 量子阱激光器 

分 类 号：TN248.4[电子电信—物理电子学]