光导型GaN/Si探测器的研制  

Fabrication of GaN/Si photoconductive detectors

作　　者：江若琏[1] 席冬娟[1] 赵作明[1] 陈鹏[1] 沈波[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《功能材料与器件学报》2000年第3期256-258,共3页Journal of Functional Materials and Devices

基　　金：863计划;国家自然科学基金资助项目!(69987001;69636010;69806006)

摘　　要：采用MOCVD技术在Si(111)衬底上生长GaN薄膜，以此材料制备成光导型Si基GaN紫外探测器。探测器的光谱响应表明，在紫外波段250－360nm有近于平坦的光电流响应，363nm附近有陡峭的截止边，357nm波长处5V偏压下的响应度高达6.9A/W。响应度与偏压的变化关系表明，4V以前为线性增加，5V后达到饱和。Using the GaN epilayer which was grown on Si(111) by MOCVD to fabricate GaN ultraviolet detectors is reported in this paper. The detectors exhibit a high and flat responsivity in UV region with the wavelength from 250nm to 360nm and a sharp cut－ off at 363nm. At 357nm, a maximum responsivity of 6.9A/W is achieved under 5V bias. The relationship between the responsivity and the bias voltage shows that the responsivity saturates when the bias voltage reaches 5V.

关 键 词：响应度 光导型GaN/Si探测器 研制 MOCVD 

分 类 号：TN23[电子电信—物理电子学] TN36