InGaAs/InP中离子注入和新型HPT  

Ion implantation in InGaAs/InP and novel HPT

作　　者：李国辉[1] 杨茹[1] 于民[1] 韩卫[1] 曾一平[2] 

机构地区：[1]北京师范大学低能核物理所,北京市辐射中心北京100875 [2]中科院半导体所,北京100083

出　　处：《功能材料与器件学报》2000年第3期259-262,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金!(69676030)资助;北京市基金!(4962004;4992004)资助

摘　　要：InGaAs/InP是制作光电器件与微波器件的重要材料。离子注入InGaAs/InP做掺杂或制作高阻层是人们十分关注的研究课题。采用Fe＋注入InGaAs/InP得到了电阻率升高的好结果。用Be＋注入制作了新结构HPT的基区。研制成功了在1.55μm波长工作的InGaAs/InP新结构光电晶体管,在0.3μW入射光条件下，光电增益为350。InGaAs/InP was implanted with 360 KeV 5× 1014cm－ 2 Fe＋ and processed by rapid thermal annealing . The resistivity of InGaAs layers was raised. n－ InGaAs was implanted with Be＋ . p－ InGaAs base of novel HPT was formed after RAT. Novel HPT was fabricated by ion implantation. The photocurrent gain reached 350 for 0.3μ Wincident light power with the warelength of 1.55μ m.

关 键 词：INGAAS/INP 离子注入 HPT 

分 类 号：TN364.3[电子电信—物理电子学]