一种基于准分子激光退火的GeSn合金生长新技术  

A Novel Technique for GeSn Alloy Growth Using Excimer Laser Anneal

作　　者：周谦[1] 杨谟华[1] 王向展[1] 李竞春[1] 罗谦[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微电子学》2013年第2期274-277,共4页Microelectronics

摘　　要：针对源漏诱生应变Ge沟道MOSFET的应用前景,开发了一种基于离子注入与准分子激光退火的GeSn合金生长技术。X射线衍射与透射电镜测试结果表明,采用该技术可得到质量优良的GeSn单晶。材料表面平整,无位错缺陷产生,与快速热退火方式相比,晶体质量有明显提高。Sn注入剂量为8×1015cm-2的样品经退火后,其替位式Sn原子含量为1.7%,可满足应变Ge沟道MOSFET的设计要求。该技术附加工艺少,效率高,在实际生产中具有较大的参考价值。A novel technique for GeSn alloy growth was demonstrated,in which Sn ion implantation and excimer anneal were employed to form single crystal GeSn.XRD and TEM measurements showed that the as-formed GeSn alloy exhibited smooth surface and was free from dislocations.The quality of GeSn crystal prepared with the new method showed great improvement,compared with rapid thermal annealing.For samples with Sn implant dose of 8×10^15 cm^-2,the substitutional Sn content was 1.7% after annealing,which satisfied the requirement of MOSFETs for strained Ge channel.The new technique,which only added minimum steps into the process,showed robust production capability.

关 键 词：GeSn 应变Ge MOSFET 准分子激光 离子注入 

分 类 号：TN304[电子电信—物理电子学]