自保护MOS栅晶闸管  

A Novel Self protected MOS gated Thyristor

作　　者：高玉民[1] 单建安[2] 许曙明 

机构地区：[1]西安交通大学电信学院,西安710049 [2]香港科技大学 [3]新加坡微电子所

出　　处：《电子学报》2000年第11期22-24,35,共4页Acta Electronica Sinica

摘　　要：本文报告一种叫做自保护MOS栅晶闸管的新器件 .这种器件无寄生闩锁效应 ,并在较高阳极电压下展现出电流下降而不是饱和或上升的特性 .因此 ,这种新器件具有令人满意的正偏安全工作区 .器件的保护点由用户外接输入电阻自行调节 ,极大增加了使用的灵活性 .此外 ,器件保护点电流和电压的温度系数均为负 。A novel device called self protected MOS gated thyristor is reported for the first time.This device is parasitic latch up free,and exhibits the characteristic of output current decrease,instead of current saturation or increase at higher anode voltage.Therefore,the novel device possesses satisfactory forward biased safe operating area.The device protected point can be adjusted by customer through external applied input resistance and this improves the flexibility dramatically.In addition,the temperature coefficients of current and voltage at protected point are negative.Such a feature makes the device self protected more efficiently at high temperature.

关 键 词：MOS栅晶闸管 自保护 安全工作区 SOI 沟槽隔离 

分 类 号：TN34[电子电信—物理电子学]