栅结构对功率SiC MESFET器件性能的影响  

Effects of Gate Construction on the Performance of Power SiC MESFETs

作　　者：李岚[1] 王勇[2] 默江辉[2] 李亮[2] 蔡树军[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第5期361-364,共4页Semiconductor Technology

摘　　要：报道了对SiC MESFET器件多种纵向结构设计进行的研究和分析,设计了采用单凹槽栅结构、多凹槽栅结构和介质埋栅结构三种不同纵向结构器件,并对三种器件结构进行了仿真优化。对于大功率微波器件,击穿电压和微波性能是判定器件直流及微波性能的关键参数,比较了具有不同栅结构器件的栅漏击穿电压及其输出功率、增益和效率等微波参数。给出了具有介质埋栅结构的器件性能测试结果。分析表明,介质埋栅结构中凹槽和复合介质钝化层对靠近栅漏一侧的栅边缘峰值电场强度进行了调制,提高了栅漏击穿电压,增大了器件微波输出功率。最终测试结果表明,器件在S波段实现脉冲输出功率大于45 W,功率增益大于8.5 dB,效率大于40%。The multiform longitudinal construction of SiC MESFETs was investigated and analyzed. The single recess gate, the multiple recess gate and the dielectric bury gate were designed and optimized to get the devices. Usually, the breakdown voltage and microwave characteristics are the important parameters for the large gate-width devices, so the microwave parameters of the devices with different gate structure were compared such as the gate-drain breakdown voltage output power, gain, and efficiency etc. The performance of the dielectric bury gate structure was tested. The recess and the compound passivation of the dielectric bury gate structrue modulated the peak electric field intensity and increase the breakdown voltage and the output power. The device shows a pulsed output power more than 45 W with a power gain more than 8.5 dB and a drain efficiency more than 40% at S-band.

关 键 词：SiCMESFET 栅结构 输出功率 凹槽栅 介质埋栅 

分 类 号：TN304.24[电子电信—物理电子学]