单Halo全耗尽应变Si绝缘硅金属氧化物半导体场效应管的阈值电压解析模型  

Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

作　　者：辛艳辉[1] 刘红侠[1] 范小娇[1] 卓青青[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2013年第10期428-433,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60976068;61076097);教育部博士点基金资助项目(批准号:20110203110012)资助的课题~~

摘　　要：为了改善金属氧化物半导体场效应管(MOSFET)的短沟道效应(SCE)、漏致势垒降低(DIBL)效应,提高电流的驱动能力,提出了单Halo全耗尽应变硅绝缘体(SOI)MOSFET结构,该结构结合了应变Si,峰值掺杂Halo结构,SOI三者的优点.通过求解二维泊松方程,建立了全耗尽器件表面势和阈值电压的解析模型.模型中分析了弛豫层中的Ge组分对表面势、表面场强和阈值电压的影响,不同漏电压对表面势的影响,Halo掺杂对阈值电压和DIBL的影响.结果表明,该新结构能够抑制SCE和DIBL效应,提高载流子的输运效率.A single Halo fully depleted strain Si Silicon-On-insulator（SOI）structure,which has the advantages of strained Si,Halo doping,and SOI structure,is proposed to improve driving current,suppress the short channel effect（SCE）and drain induced barrier lowering（DIBL）effect.A two-dimensional analytical model for the surface potential,the surface electric field and the threshold voltage is proposed by solving Poisson＇s equation.The effects of Ge fraction in the relaxed layer on surface potential and threshold voltage are investigated.In the paper we analyze the influence of drain voltage on surface potential.Finally the effects of Halo doping on threshold voltage and DIBL are investigated.The results show that the novel device can suppress the short channel effect and DIBL effect,and increase carrier transport speed.

关 键 词：应变SI 阈值电压 短沟道效应 漏致势垒降低 

分 类 号：TN386[电子电信—物理电子学]