GaN基TFT-LED有源阵列显示芯片的设计研究  

Analysis of GaN-based TFT-LED Active Matrix Micro-display Chip

作　　者：杨利忠[1] 李绪诚[1] 吴震[1] 李良荣[1] 邓朝勇[1] 

机构地区：[1]贵州大学理学院电子系,贵阳550025

出　　处：《半导体光电》2013年第2期212-214,共3页Semiconductor Optoelectronics

基　　金：贵州省科技计划支持项目(2012-3005;2010-4005;2009-15;2011-2016;2011-2104);贵阳市科技计划项目(2012101-2-4);贵州大学研究生创新基金项目(理工2012021)

摘　　要：对GaN基TFT-LED有源阵列显示芯片结构进行了优化设计,并详细介绍了它的工作原理。文中采用Cadence公司的Virtuoso Spectre Circuit Simulator软件,通过设计芯片像素单元TFT晶体管的参数,研究了阵列芯片中LED的输出电流波形。仿真结果显示通过阵列芯片中LED电流达到了54.86mA,为芯片提供了足够的导通电流。研究结果表明TFT-LED有源阵列显示芯片结构的优势在于减少外围设备的同时增大导通电流。The structure design of GaN-based active-matrix TFT-LED display chip was optimized, and the working principles were introduced in detail. Based on designing the parameters of chip pixel unit TFT transistor, the output current waveform of the LED was simulated with the software of Cadence Virtuoso Spectre Circuit Simulator. Simulation results show that the current going through the LED is 54. 86 mA, which can provide sufficient breakover current for the chip. It is indicated that the advantages of TFT-LED chip structure are in reducing the peripheral devices while increasing the conduction current.

关 键 词：TFT GAN基LED CADENCE 有源阵列 

分 类 号：TN873[电子电信—信息与通信工程]