单粒子效应TCAD数值仿真的三维建模方法  

The Single Event Effects TCAD Numerical Simulation of 3D Modeling Method

作　　者：陈睿[1] 纪冬梅 封国强[1] 沈忱 韩建伟[1] 

机构地区：[1]中国科学院国家空间科学中心,北京1001901 [2]苏州珂晶达电子有限公司,苏州215123

出　　处：《核电子学与探测技术》2013年第3期289-295,共7页Nuclear Electronics & Detection Technology

基　　金：国家自然科学基金资助项目(Y0503GA160)

摘　　要：文中探讨了单粒子效应数值仿真建模的问题。首先,基于对单阱N+-P结构的二极管在重离子辐照下的TCAD仿真,研究电流脉冲和电荷收集特性对器件模型几何尺寸与比例的依赖关系,进一步给出了精确仿真单粒子效应所需的模型尺寸的实用标准。其次,讨论阱接触电极的位置对电流脉冲和电荷收集的影响,指出对阱接触的正确建模的必要性。It is the first in the series of papers on simulating the SEE （ Single Event Effects） in semiconductor devices with controllable accuracy using TCAD simulation tools. In the paper, two topics regarding the construction of 3D models for simulation are discussed. Firstly, through simulating the transient current waveform of a N ＋/P junction diode with well structure, the dependence of the current and collected charge upon the geometric dimensions of the simulated device model is investigated, based on which a practical guideline is pro- posed for determining the appropriate size of the model for accurate simulation of SEE. Secondly, the impact of the well -contact＇s location on the current wave correctly modeling the well - contact is highligh form and charge collection is discussed, and the importance of ted.

关 键 词：单粒子效应 数值仿真 TCAD 器件模型 几何效应 阱接触 

分 类 号：TN4[电子电信—微电子学与固体电子学]