PMOSFET低剂量率辐射损伤增强效应研究  

Research on Enhanced Low Dose Rate Sensitivity Effect for PMOSFET Used in Space Dosimeter

作　　者：高博[1] 刘刚[1] 王立新[1] 韩郑生[1] 余学峰[2] 任迪远[2] 孙静[2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011

出　　处：《原子能科学技术》2013年第5期848-853,共6页Atomic Energy Science and Technology

摘　　要：为研究PMOSFET的低剂量率辐射损伤增强效应,本文对4007电路中PMOSFET在不同剂量率、不同偏置条件下的辐射响应特性及高剂量率辐照后不同温度下的退火效应进行了讨论。实验结果表明:相比高剂量率,低剂量率辐照时PMOSFET阈值电压漂移更明显,此种PMOSFET具有低剂量率辐射损伤增强效应;高剂量率辐照后进行室温退火时,由于界面陷阱电荷的影响,PMOSFET阈值电压继续负向漂移,退火温度越高,阈值电压回漂越明显;辐照时,零偏置条件下器件阈值电压的漂移较负偏置时的大,认为是最劣偏置。In this paper,the ionizing damage effects and annealing behavior of foreign manufacturer production PMOSFET in 4007 circuit under different dose rates and bias conditions were investigated.The experiment results show that the PMOSFETs threshold voltage negative shift is more obvious with the dose rate reduction.It is thought that the PMOSFET of this kind of type has enhanced low dose rate sensitivity（ELDRS） effect.The PMOSFETs threshold voltage does not recover at room annealing after high dose rate exposure and continues the negative drifting,which is due to the radiation-induced interface traps build-up.The annealing temperature is higher,the threshold voltage return drift is more obvious.Zero bias is the worst bias condition.

关 键 词：PMOSFET 退火效应 低剂量率辐射损伤增强效应 

分 类 号：V520[航空宇航科学与技术—人机与环境工程]