Zn_(1-x)Cd_xSe/ZnSe异质结系统的施主能级  

Donor Level in a Zn_(1-x) Cd_x Se/ZnSe Heterojunction System

作　　者：宫箭[1] 班士良[1] 

机构地区：[1]内蒙古大学物理学系,内蒙古呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2000年第5期482-486,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：内蒙古自治区人才工程资助

摘　　要：对单异质结界面系统 ,引入三角近似异质结势 ,利用变分法讨论在界面附近束缚于施主杂质的单电子基态能量 .对 Zn1-x Cdx Se/Zn Se系统的杂质态结合能做了数值计算 ,给出结合能随杂质位置、电子面密度和A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a thriangular potential.The impurity state binding energy is obtained numerically for the Zn 1-x Cd x Se/ZnSe system.The relations between the ground state binding energy ahd the impurity position,the electron areal density,the Cd composition are given respectively.

关 键 词：异质结 结合能 硒化锌 施主杂质 锌镉硒化合物 

分 类 号：TN304.201[电子电信—物理电子学] O474[理学—半导体物理]