化学方法实现GaAs表面Cu的沉积  

Chemical Method of Copper Deposition on the GaAs Surface

作　　者：于海霞[1] 付浚[1] 杨瑞霞[1] 袁炳辉 

机构地区：[1]河北工业大学电气信息学院,天津300130

出　　处：《河北工业大学学报》2000年第4期21-23,共3页Journal of Hebei University of Technology

基　　金：河北省自然科学基金!(579043)

摘　　要：用一种简单的化学方法在ＬＥＣ　ＧａＡｓ晶体表面实现了Ｃｕ的沉积，沉积的Ｃｕ层均匀性、牢固性良好，厚度达到无限源扩散的要求．本文介绍了化学镀铜液的配制及镀铜工艺，并对化学镀铜的机理进行了讨论。The copper layer was deposited on the LEC GaAs surface by using a kind of simple chemical method. The uniformity and the tightness of the copper layer were excellent, and the thickness can meet the requirment of the unlimited source diffusion. The composition of the copperizing solution and the process of the copper deposition are presented, the mechanism for copper deposition is also discussed.

关 键 词：铜 砷化镓 化学方法 化学镀铜 化学沉积法 

分 类 号：TN304.23[电子电信—物理电子学]