新型抗蚀剂的电子束曝光性能研究  

Study on Property of New Resists in Electron Beam Exposure

作　　者：赵珉[1] 朱齐媛[1] 陈宝钦[2] 牛洁斌[2] 

机构地区：[1]湛江师范学院信息科技与技术学院,广东湛江524048 [2]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029

出　　处：《半导体技术》2013年第6期458-463,共6页Semiconductor Technology

基　　金：国家自然科学基金项目(61078060);国家重大科学仪器设备开发专项(2011YQ04013608)

摘　　要：为了满足越来越多的特殊结构纳米电子器件的制作要求,亟需进一步提高电子束光刻的分辨率与质量,选择适合的高分辨率电子束抗蚀剂材料显得尤为重要。从曝光剂量以及显影与烘烤过程中具体工艺条件的影响等方面对三种新型抗蚀剂材料HSQ,Calixarene和ARN7520进行了电子束曝光性能的研究,同时也对三者的优缺点进行了讨论。通过实验可知,三种新型抗蚀剂均有小于50 nm的高曝光分辨率。HSQ与衬底有更好的附着力,具有较高的机械强度和对比度,在小面积密集图形的制作中具有较好的性能。而ARN7520具有较高的灵敏度,受电子束邻近效应的影响较小,更适合复杂版图的制作。Calixarene虽然也具有较高的曝光分辨率,但过低的灵敏度严重限制了其实用性。To meet the increasing need of fabrication of nano-scale electronic devices with special structure,the resolution and performance of electron beam lithography need to be further improved.Therefore,choosing suitable high resolution electron beam resist appears to be especially important.The properties in electron beam exposure of three new kinds of resists including HSQ,Calixarene and ARN7520 were studied from the aspects of exposure dose and the influence of detail conditions in development and bake.At the same time their advantages and disadvantages were also discussed.The experiment indicates that the three resists all have high exposure resolution less than 50 nm.HSQ has better adhesion with substrates,well mechanical strength and contrast,which can be well applied in the manufacture of small-area dense figure.ARN7520 with higher sensitivity is less affected by proximity effect and more suitable for fabrication of complex layout.Calixarene also has high resolution,but the low sensitivity badly restricts its practicability.

关 键 词：电子束光刻 抗蚀剂 高分辨率 灵敏度 对比度 

分 类 号：TN305.7[电子电信—物理电子学]