InN的光致发光特性研究  

Study on the photoluminescence properties of InN films

作　　者：王健[1] 谢自力[1] 张荣[1] 张韵[1] 刘斌[1] 陈鹏[1] 韩平[1] 

机构地区：[1]南京大学电子科学与工程学院 江苏省光电信息功能材料重点实验室,南京210093

出　　处：《物理学报》2013年第11期492-495,共4页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(2011CB301900;2012CB619304);国家高技术研究发展计划(2011AA03A103);国家自然科学基金(60990311;60820106003;60906025;60936004;61176063);江苏省自然科学基金(BK2008019;BK2011010;BK2010385;BK2009255;BK2010178);南京大学扬州光电研究院研发基金资助的课题~~

摘　　要：研究了利用金属有机化学气相淀积生长的氮化铟薄膜的光致发光特性.由于氮化铟本身具有很高的背景载流子浓度,费米能级在导带之上,通过能带关系图以及相关公式拟合光致发光图谱可以得到生长的氮化铟的带隙为0.67eV,并且可以计算出相应的载流子浓度为n=5.4×1018cm-3,从而找到了一种联系光致发光谱与载流子浓度两者的方法.另外通过测量变温条件下氮化铟的发光特性,研究了发光峰位以及发光强度随温度的变化关系,发现光致发光强度随温度的升高逐渐降低,发光峰位随温度的升高只是红移,并没有出现"S"形的非单调变化,这种差异可能是由于光致发光谱的半高宽过高导致,同时也可能与载流子浓度以及内建电场强度有关.The photoluminescence （PL） properties of InN films grown by metal organic cherhical vapor deposition （MOCVD） have been investigated. InN has a high level of background carder concentration, which makes the Fermi level lie above the conduction band. By nonlinear fitting of the PL results, along with the energy band relations, we calculated the band gap of InN film to be 0.67 eV and the carrier concentration n =5.4×10^18cm^-3. Thus we found a connection between PL results and the carrier concentration of InN films. In addition, we also studied the dependence of peak position and intensity of PL on temperature： the intensity of photol decreases as the temperature increases, and the peak position shows a red shift instead of an S-shape variation. Such a difference may be explained by a huge full width at half maximum of PL spectra. Also the concentration of carriers and the magnitude of the built-in electric field in the material may have influence on such a result.

关 键 词：氮化铟 金属有机化学气相淀积 光致发光 载流子浓度 

分 类 号：TN304.055[电子电信—物理电子学]