低漏电、高击穿电容的HDPCVD工艺研究  

Research of HDPCVD Process for Low Current Leakage and High Breakdown Electric Field Capacitors

作　　者：刘海琪[1] 王泉慧[1] 栗锐[1] 任春江[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2013年第3期280-283,共4页Research & Progress of SSE

摘　　要：介绍了一种低漏电、高击穿电容的HDPCVD(ICPCVD)工艺,并对制备的电容进行了电性能分析和失效分析。通过优化确定了工艺的最佳反应条件,研制出的电容其击穿场强达到8.7MV/cm,在电压加到200V时其电容漏电小于0.5μA。通过与传统的PECVD工艺进行对比,充分体现了HDPCVD(ICPCVD)工艺生长介质的低温生长、低漏电、较高击穿场强、无H工艺等优点。随后的失效分析表明,电容上下电极金属对电容成品率有着很大影响。An HDPCVD process for low current leakage and high breakdown electric field capacitors is presented.Experiments were carried out to evaluate the electrical properties and to make the failure analysis of the capacitors.The process was optimized,resulting in the capacitor＇s breakdown electric field of 8.7 MV/cm and the low current leakage of below 0.5 μA at the voltage up to 200 V;Compared to the traditional PECVD process,HDPCVD process show a series of merits： low temperature,low current leakage,high breakdown electric field and no H forming the film.Failure analysis show that the electrode metals of capacitors have great impact on capacitor＇s yield.

关 键 词：高密度等离子体化学气相淀积 低漏电 高击穿电场 电容 

分 类 号：TN304.055[电子电信—物理电子学] TN305