用于200V电平位移电路的薄层SOI高压LDMOS  

High Voltage Thin Layer SOI LDMOS for 200 V Level Shift Circuit

作　　者：陈正才[1] 周淼[1] 洪根深[1] 高向东[1] 苏郁秋[1] 何逸涛[2] 乔明[2] 肖志强[1] 

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2013年第6期38-42,共5页Electronics & Packaging

摘　　要：文章基于1.5μm厚顶层硅SOI材料,设计了用于200 V电平位移电路的高压LDMOS,包括薄栅氧nLDMOS和厚栅氧pLDMOS。薄栅氧nLDMOS和厚栅氧pLDMOS都采用多阶场板以提高器件耐压,厚栅氧pLDMOS采用场注技术形成源端补充注入,避免了器件发生背栅穿通。文中分析了漂移区长度、注入剂量和场板对器件耐压的影响。实验表明,薄栅氧nLDMOS和厚栅氧pLDMOS耐压分别达到344 V和340 V。采用文中设计的高压器件,成功研制出200 V高压电平位移电路。High voltage thin layer SOI devices based on 1.5-υm-thick silicon layer have been designed for 200 V level shift circuit. The designed devices include thin gate oxide nLDMOS and thick gate oxide pLDMOS. Multiple field plates are induced in both nLDMOS and pLDMOS for achieving high breakdown voltage. Field implant technology is adopted in pLDMOS to avoid punch-through breakdown induced by back gate effect. The influences of drift length and implantation dose, as well as field plates on breakdown voltage are discussed. Experiment results show that the breakdown voltage of nLDMOS and pLDMOS are 344 V and 340 V, respectively. A 200 V level shift circuit using the designed devices has been successfully realized.

关 键 词：LDMOS 薄层SOI 多阶场板 场注技术 高压电平位移电路 

分 类 号：TN386.1[电子电信—物理电子学]