退火温度对磁控溅射Mo薄膜结构和性能的影响  

Influences of annealing temperature on microstructure and electrical properties of Mo films

作　　者：邢明立[1] 花银群[1] 陈瑞芳[2] 胡光[1] 孙伟[1] 朱爱春[2] 

机构地区：[1]江苏大学材料科学与工程学院,江苏镇江212013 [2]江苏大学机械工程学院,江苏镇江212013

出　　处：《金属热处理》2013年第7期78-80,共3页Heat Treatment of Metals

基　　金：江苏大学高级人才基金(10JDG061)

摘　　要：采用磁控溅射技术在石英基体上制备了厚度为600 nm的Mo薄膜,并在不同温度下(400～900℃)对其进行退火处理。通过XRD、SEM、四探针测试仪对Mo薄膜的结构和性能进行了分析。结果表明,随着退火温度的升高,(110)晶面择优取向特性增强。Mo薄膜在退火温度为800℃时电阻率达到最小值3.56×10-5Ω.cm,在900℃退火时薄膜出现宽度约为50 nm的微裂纹且薄膜电阻率较大。By DC magnetron sputtering, the Mo films of 600 nm thickness were successfully deposited on quartz substrates subsequence annealing at 400-900 ℃. The surface morphology and strcuture of the films were analyzed by scanning electron microscopy （SEM）, X-ray diffraction （XRD） etc. The results show that the （110） crystal plane preferred orientation characteristic is enhanced with increasing annealing temperature. It is found that the Mo film reaches its minimum specific resistance of 3.56 ×10^ -5Ω·cm annealing at 800 ℃, and microcrack of 50 nm is appeared with larger specific resistance annealing at 900 ℃.

关 键 词：MO薄膜 磁控溅射 退火温度 微观结构 电学性能 

分 类 号：TG174.44[金属学及工艺—金属表面处理]