SOI高g值压阻式加速度传感器与工艺实现  

Fabrication of High-g Piezo-Resistive Accelerometer with Silicon-on-Insulator Materials

作　　者：许高斌[1] 陈兴[1] 马渊明[1] 卢翌[1] 汪祖民[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院安徽省微电子机械系统工程技术研究中心,合肥230009

出　　处：《真空科学与技术学报》2013年第7期674-677,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家"863"计划(2013AA041101);安徽省科技攻关计划(10120106005);中央高校基础业务费资助项目(2010HGZY0004)

摘　　要：基于SOI技术,利用电感耦合等离子体硅深加工,设计制备了一种新型平面内振动高g值压阻式加速度计。该加速度计包括X轴向与Y轴向单元,采用扇形敏感质量块平板内振动结构。对称的布局方式,有效地消除了灵敏度的交叉干扰,提高了传感器的测量精度。测试系统分析出加速度传感器的灵敏度是1.170μV/g。研究表明该加速度传感器可实现对量程高达25×104g加速度的测量。A novel type of the high-g（gravitational acceleration） piezo-resistive in-plate vibration accelerometer has been successfully designed,and fabricated with the silicon-on-insulator（SOI） materials via the deep inductively coupled plasma etching of the micro electromechanical system technology.The newly-developed high-g accelerometer consists of the X-axis and Y-axis structural units;and is capable of sensing the motion of the sector-structured proof mass in the plane of the device.The symmetric configuration of the accelerometer could effectively reduce the sensitivity of the cross-interference,and considerably increase the measurement accuracy of the sensor.The test results show that the sensitivity of the high-g accelerometer is up to 1.170 μV/g,and that it is capable of measuring accurately the gravitational acceleration for an extreme impact of above 25×104g.

关 键 词：高G值 压阻式加速度传感器 SOI 扇形敏感质量块 双U型压敏电阻 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]