0.18μm SOI NMOS单粒子效应中电荷累积机理的仿真研究  

Simulation and Research of the Mechanism for Charge Collection of SEU in 0. 18 μm SOI NMOS

作　　者：邱恒功 李洛宇 裴国旭 杜明 

机构地区：[1]深圳市国微电子有限公司,深圳518057

出　　处：《科学技术与工程》2013年第21期6200-6202,6224,共4页Science Technology and Engineering

摘　　要：为研究0.18μm SOI工艺集成电路单粒子入射时电荷累积的机理,分别对电容和NMOS进行了单粒子入射的仿真研究。仿真结果表明,单粒子入射时,MOS电容中的电荷累积主要由位移电流引起;而在SOI NMOS中的电荷累积还有第二种机制,即当单粒子入射位置在体漏结附近时,漏极和体接触产生的电荷累积。第二种机制会对SOI工艺集成电路的单粒子加固方法产生重要影响。MOS capacitor and SOI NMOSFET are simulated about the single-event,which are used to research charge collection in ICs based on 0.18 μm SOI process.Simulation results show that when ion strikes,the mechanism for charge collection in capacitor is due to displacement circuit,and for SOI NMOSFET,a second mechanism also contributes to charge collection,which the charge collection results from drain and body-tie when ion strikes the near regions of the body-to-drain junctions.The second charge collection mechanism may significantly impacts on SOI ICs’SEU hardening.

关 键 词：SOI NMOS 电荷积累 单粒子翻转 

分 类 号：O482.4[理学—固体物理]