氦等离子体前处理对多晶硅薄膜性能的影响  

Influence of Helium plasma pre-treatment on properties of polycrystalline silicon films

作　　者：汝丽丽[1,2,3] 孟月东[1,2] 陈龙威[1,2] 

机构地区：[1]中国科学院合肥物质研究院等离子体所,合肥230031 [2]中国科学院大学合肥物质科学研究院,合肥230031 [3]深圳大学-中国科学院等离子体物理研究所联合应用等离子体实验室,深圳518060

出　　处：《深圳大学学报（理工版）》2013年第4期398-403,共6页Journal of Shenzhen University(Science and Engineering)

基　　金：广东高校优秀青年创新人才培育计划资助项目(2012LYM_0115);深圳市科技基础研究资助项目(JC201105170703A)~~

摘　　要：采用微波电子回旋共振等离子体增强磁控溅射(microwave electron cyclotron resonance plasma-enhanced magnetron sputtering,ECR-PEMS)和电子回旋共振等离子体辅助化学气相沉积(microwave electroncyclotron resonance chemical vapor deposition,ECR-CVD)技术,分别在单晶硅片(100)基底上低温制备了多晶硅薄膜.采用拉曼光谱仪、X射线衍射仪以及原子力显微镜对薄膜微观结构及表面形貌进行表征,研究纯氦等离子体基底前期处理对所沉积薄膜性能的影响.结果表明,氦等离子体前处理技术能大幅提高多晶硅薄膜结晶度和颗粒尺寸,明显改善ECR-CVD法所得多晶硅薄膜的微观结构特性和表面形貌.Polycrystalline silicon thin films deposited on p-type（100） silicon wafer substrates were prepared by means of microwave electron cyclotron resonance plasma-enhanced magnetron sputtering（ECR-PEMS） and microwave electron cyclotron resonance chemical vapor deposition（ECR-CVD） at low temperatures in the present work.To characterize the microstructure and surface morphology of the films,the Raman spectroscopy,X-ray diffraction and atomic force microscopy were used.The study focuses on the effect of pure helium plasma substrate pre-treatment on the deposited film properties.The results show that the film crystallinity and grain size are obviously enhanced by the helium plasma pre-treatment in both deposition processes.At the same time,the microstructure and surface morphology of polycrystalline silicon film with ECR-CVD are improved.

关 键 词：等离子体物理 多晶硅薄膜 电子回旋共振 等离子体增强 氦等离子体 磁控溅射 化学气相沉积 薄膜结晶度 纳米材料 

分 类 号：O539[理学—等离子体物理] O782.7[理学—物理]