65nm标准CMOS工艺阈值电压系统波动检测方案设计  

Test Scheme for Systematic Variation of Threshold Voltage in 65nm Standard CMOS Technology

作　　者：袁瑞[1] 董庆[1] 简文翔[1] 林殷茵[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《固体电子学研究与进展》2013年第4期377-381,共5页Research & Progress of SSE

摘　　要：设计了一种标准CMOS工艺下的阈值电压系统波动检测电路,其检测电路核心部分是工作在亚阈值区的环形振荡器(SRO)。该方案包括8种级数、2种尺寸共16种SRO,并以8种级数、2种尺寸共16种传统环形振荡器(RO)作对比,在SMIC 65nm标准CMOS工艺上流片验证。芯片测试结果表明:新方案相对传统检测方案具有更高的灵敏度,更直观;且阈值电压的系统波动随器件尺寸增大而略微减小。For a designed test circuit of systematic variation of threshold voltage in standard CMOS technology, the core part is a sub-threshold-region ring oscillator （SRO）. The test scheme includes 16 SROs in comparison with 16 ROs both with 8 different stages and 2 different sizes. The scheme was verified in SMIC 65 nm standard CMOS technology and the test indicated that the SRO scheme had a higher sensitivity and was more directly perceived than the traditional RO scheme; the systematic variation of threshold voltage decreased slightly as the device size in- creased.

关 键 词：系统波动 亚阈值 环形振荡器 标准互补金属氧化物半导体工艺 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN752