孔结构对水平振动谐振器空气阻尼的比较分析  

Comparison analysis on hole structure on air damping of horizontal vibration resonator

作　　者：孙晋川[1] 乔大勇[1] 任森[1] 邓进军[1] 

机构地区：[1]西北工业大学空天微纳系统教育部重点实验室,陕西西安710072

出　　处：《传感器与微系统》2013年第9期46-49,共4页Transducer and Microsystem Technologies

摘　　要：基于SOI工艺的水平振动梳状硅微谐振器的品质因数Q值在真空封装下能达到105量级以上。但是在常压下,由于受到空气阻尼的影响,其Q值往往降至102量级甚至更小。增加谐振器质量可以提高Q值,但是会增大谐振器面积使绝缘层难以释放。由此提出了一种减小空气阻尼来提高水平振动谐振器Q值的方法,通过设计一系列不同形状的开孔硅微谐振器并比较其实验数据,得到最优的释放孔结构以减小谐振器所受的空气阻尼从而得到更高的Q值。该研究对水平振动谐振器结构设计有一定意义。The quality factor（Q value）of horizontal vibration comb silicon micro resonator based on SOI technology can reach above 105 quantity level in vacuum packaging.But under constant pressure,Q value often fall to 102 or even lower due to influence of air damping.Improving the quality of resonator will increases the Q value,however,the area of resonator will be increased and the isolation layer will hard to be released.Design,fabrication and test of a series of perforated silicon micro resonators are implemented in order to improve the Q value of the horizontal resonator by reducing air damping.The research has certain meaning for structure design of horizontal vibration resonator.

关 键 词：SOI Q值 空气阻尼 水平振动 开孔硅微谐振器 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]