高效大功率LED用蓝宝石图形衬底的制备  

Preparation of Patterned Sapphire Substrate for High-efficiency and High-power Light Emitting Diodes

作　　者：汪桂根[1] 崔林[1] 韩杰才[1,2] 王新中[3] 严帅[1] 秦国双[1] 

机构地区：[1]哈尔滨工业大学深圳研究生院,深圳518055 [2]哈尔滨工业大学复合材料与结构研究所,哈尔滨150001 [3]深圳信息职业技术学院,深圳518172

出　　处：《人工晶体学报》2013年第8期1498-1503,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61240015);广东省自然科学基金(9451805707003351;S2012010010030);深圳市基础研究计划项目(JCYJ20120613134210982;JCYJ20120615101957810);哈尔滨工业大学科研创新基金(HIT.NSFIR.2011123)

摘　　要：首先在蓝宝石衬底上旋涂PMMA/copolymer双层胶,然后再进行电子束光刻处理,随后溅射铝膜,并结合剥离技术,从而制备图形化金属铝膜;最后再采用两步热处理法,使图形铝膜发生固相外延反应。在此过程中,侧重于电子束光刻和高温热处理的工艺优化研究。SEM测试结果表明,图形化铝膜在450℃低温氧化热处理24 h后,其图形形貌没有发生明显改变;在温度低于1200℃的高温热处理1 h后,图形仍然存在。HRXRD分析表明,图形化铝膜在450℃低温热处理24 h后再在1000℃高温热处理1 h,可在蓝宝石衬底上形成氧化铝外延薄膜;并且相比于基片,氧化铝外延薄膜的结晶质量还有所提高。本方法成功实现了高效大功率用LED蓝宝石图形衬底的制备。In this paper, patterned sapphire substrates were prepared by dual stage annealing of patterned AI films prepared by electron beam lithography of PMMA/copolymer bilayer resist. The designed four kinds of A1 patterns were obtained by optimizing the e-beam lithography process. The little change in the morphology of the patterns was observed after annealing for 24 h at 450 ℃. The patterns were retained after high temperature annealing for 1 h at less than 1200 ℃ HRXRD results indicated that the island patterns are epitaxially grown on sapphire substrates by dual-stage annealing for 24 h at 450℃ and then 1 h at 1000 ℃. Furthermore, the alumina epitaxial patterns have higher crystalline quality compared with sapphire substrates. The above-mentioned method has sueessfully achieved the preparation of patterned sapphire substrates for high-efficieney ＆ high-power LED applications.

关 键 词：蓝宝石 图形衬底 电子束光刻 剥离 发光二极管 

分 类 号：TN312.8[电子电信—物理电子学]