一种新的非均匀减薄法——选择阳极氧化法  

A NEW TECHNIQUE FOR THINNING THE THICKNESS OF UNUNIFORM EPILAYERS--SELECTIVE ANODIC OXIDATION

作　　者：高凤升[1] 龚秀英[1] 葛永才[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《电子科学学刊》1991年第2期221-224,共4页

摘　　要：提出了一种新的非均匀减薄法,即选择阳极氧化法。用于n^+-n-n^(++)GaAs高低结雪崩二极管的n^+层厚度的控制,使器件的效率达到理论值。A new technique called selective anodic oxidation, by which the ununiform epilayers can be thinned, is presented. The thickness of n+-layers of GaAs IMPATT diodes with n+-n-n++ structure has been strictly controlled by the use of this technique. This results in the efficiency of IMPATT diodes up to its theoretical value.

关 键 词：半导体工艺 减薄法 阳极氧化 

分 类 号：TN305.5[电子电信—物理电子学]