对基于GaN晶体管自加热效应的研究(英文)  

Study on the Self-heating Effect in GaN-based Transistors

作　　者：曾令艳[1] 毕迎鑫[1] 张先休[1] 

机构地区：[1]六盘水师范学院数学系,六盘水553004

出　　处：《科学技术与工程》2013年第26期7725-7730,共6页Science Technology and Engineering

基　　金：贵州省教育厅自然科学基金(黔教科2012B266);六盘水师范学院科研项目(lpssy201012)资助

摘　　要：采用有限元分析方法(FEM)求解泊松方程,连续性方程,以及热传导方程对AlGaN/GaN高电子迁移率晶体管的自加热效应进行了数值模拟研究。着重比较了晶体管在SiC、Si及蓝宝石衬底上的沟道温度和漏电流。同时讨论了在外延层和衬底接触处的热边界电阻对晶体管电行为的影响。数值模拟表明,由于SiC的热导比较大,晶体管在其衬底上有较大的漏电流和较低的沟道温度,热边界电阻对其电行为有比较大的影响。相反,由于蓝宝石的热导比较小,晶体管在其衬底上有较低的漏电流和较高的沟道温度,显现出了比较大的自加热效应,热边界电阻对其电行为的影响可以忽略。The self-heating effect of A1GaN/GaN high electron mobility transistors （HEMTs） by using finite element method （FEM） to numerically solve Poisson equation, continuity equation, and thermal conductivity equation is studied. The work focused on comparing the channel temperature and drain current for the device on SiC, Si, and sapphire substrate. Numerical simulations illustrated that the device on the SiC substrate has higher drain current and lower channel temperature, and the thermal boundary resistance （TBR） at the interface between the epitaxial layers and the substrate has significant effect on the electrical behaviour of the device due to the high thermal conductivity of SiC. Inversely, the device on the sapphire substrate has lower drain current and higher channel temperature, and TBR has negligible influence on the electrical behaviour of the device due to the low thermal conductivity of sapphire.

关 键 词：AlGaN/GaN晶体管 自加热效应 偏微分方程 有限元方法 

分 类 号：O472.2[理学—半导体物理]