基底温度对电子束蒸发制备氧化铝薄膜的影响  

Effect of substrate temperature on alumina thin films prepared by electron beam evaporation

作　　者：王松林[1] 杨崇民[1] 张建付[1] 刘青龙[1] 黎明[1] 米高园[1] 王慧娜[1] 

机构地区：[1]西安应用光学研究所,陕西西安710065

出　　处：《应用光学》2013年第5期764-767,共4页Journal of Applied Optics

摘　　要：为了考察基底温度对氧化铝薄膜折射率以及沉积厚度的影响情况,在不同基底温度环境下,通过离子辅助电子束蒸发方式,在玻璃基底上制备了同一Tooling因子条件下所监测到相同厚度的Al2O3薄膜,利用分光光度计测量光谱透过率,依据光学薄膜相关理论,计算了基底温度在25℃~300℃范围内获得的膜层实际物理厚度为275.611nm^348.447nm,以及膜层折射率的变化。通过对实验结果的数值计算和曲线模拟,给出了基底温度对于薄膜的折射率和实际厚度的影响情况。To study the influence of substrate temperature on the refractive index of alumina thin film and the film thickness, we accomplished Al2O3 thin films by ion-assisted electron beam evaporation method under different substrate temperatures and the same Tooling factors. Based on the related the- ory of optical film, using the spectrophotometer to measure the spectral transmittance, we calculated the actual film thickness which were 275. 611 nm-348. 447 nm and the refractive index under 25℃- 300℃. With the curves by numerical calculation and the experimental results by simulation, the effect of substrate temperature on refractive index of thin films and deposition efficiency was given.

关 键 词：离子辅助电子束蒸发 薄膜光学常数 基底温度 氧化铝薄膜 

分 类 号：TN305.8[电子电信—物理电子学]