GaN基高电子迁移率晶体管的质子辐照效应研究  

Proton Irradiation Effect of GaN-based High Electron Mobility Transistor

作　　者：吕玲[1] 林志宇[1] 张进成[1] 马晓华[1] 郝跃[1] 

机构地区：[1]宽带隙半导体技术国家重点学科实验室,西安电子科技大学微电子学院,710071

出　　处：《空间电子技术》2013年第3期33-38,共6页Space Electronic Technology

摘　　要：文章研究了A1GaN/GaN高电子迁移率晶体管(HEMT)的质子辐照效应。在3MeV质子辐照下,采用三种不同辐照剂量6×10^(14),4×10^(14)和1×10^(15)protons/cm^2。在最高辐照剂量下,漏极饱和电流下降了20%,最大跨导降低了5%。随着剂量增加,阈值电压向正向漂移,栅泄露电流增加。AlGaN/GaN HEMT电学特性的退化主要是由辐照引入的位移损伤引起的。从SRIM软件计算出空位密度,将Ga空位对应的能级引入Silvaco器件仿真软件中,仿真结果与实验结果相匹配。Hall测试结果显示二维电子气(2DEG)浓度和迁移率在辐照后有所降低。The proton irradiation effects of GaN -based high electron mobility transistor was studied with protons in the energy 3MeV at fluences varying from 6×10^13 ,4×10^14 to 1×10^15 cm^-2. After proton irradiation of 2×10^15 cm^-2, the drain current and maximum transconductance decreased 20% and 5% respectively. With increasing proton fluence, the threshold voltage has a positive shift, and the gate leakage current increases. The degradation mechanism was proved to irradiation-in- duced displacement damages by the SRIM simulation. Hall effect measurements show that 2DEG density and mobility decreased after irradiation.

关 键 词：质子辐照 氮化镓高电子迁移率晶体管 Ga空位 二维电子气 

分 类 号：TN32[电子电信—物理电子学]