电力电子器件的实时仿真  

Real-time Simulation of Power Electronic Devices

作　　者：马晓军[1] 杨宗民[1] 刘春光[1] 曾庆含[1] 

机构地区：[1]中国人民解放军装甲兵工程学院控制工程系,北京市100072

出　　处：《电力系统自动化》2013年第18期108-112,共5页Automation of Electric Power Systems

基　　金：装备预先研究项目(40401010101)

摘　　要：电力电子器件在开关过程中的电压尖峰、电流尖峰以及功率损耗等问题是威胁电力电子器件乃至电力系统中电力电子装置可靠性的重要因素。文中以技术成熟、应用广泛的绝缘栅双极型晶体管(IGBT)构成电力电子电路的基本开关单元为例,进行电力电子器件的实时仿真研究。根据电力电子器件的开关特性,分析了电力电子器件间的换流过程,建立电力电子器件的实时仿真功能模型,并在现场可编程门阵列(FPGA)中实现电力电子器件的实时仿真。仿真结果能够反映电力电子器件开关过程中电压尖峰、电流尖峰以及功率损耗等关键指标。The voltage spike,current spike and power loss of power electronic devices in the switch process are important factors of reliability of power electronic devices and the power electronic system.The real-time simulation research on the power electronic device is studied using the basic switching cell of an insulated gate bipolar transistor （IGBT） as an example for its mature technique and popularity.A function model for power electronic device real-time simulation is developed according to the switching characteristics and current commutating process.The real-time simulation of power electronic devices is realized in the field programmable gate array （FPGA）.The results are able to reflect the key indexes of voltage spike,current spike and power loss in the switching process.

关 键 词：电力电子器件 实时仿真 电压尖峰 电流尖峰 开关损耗 

分 类 号：TN710[电子电信—电路与系统]